MMBD3004A/C/S
Document number: DS30353 Rev. 13 - 2
2 of 4
www.diodes.com
April 2014
? Diodes Incorporated
MMBD3004A/C/S
Maximum Ratings
(@TA
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Repetitive Peak Reverse Voltage
VRRM
350 V
Working Peak Reverse Voltage
DC Blocking Voltage
VRWM
VR
300 V
RMS Reverse Voltage
VR(RMS)
212 V
Forward Continuous Current (Note 6)
IF
225 mA
Peak Repetitive Forward Current (Note 6)
IFRM
625 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs
@ t = 1.0s
IFSM
4.0
1.0
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 6)
PD
350 mW
Thermal Resistance Junction to Ambient Air (Note 6)
RθJA
357
?C/W
Operating and Storage Temperature Range
TJ , TSTG
-65 to +150
?C
Electrical Characteristics
(@TA
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 7)
V(BR)R
350
?
?
V
IR
= 150
μA
Forward Voltage
VF
?
0.78
0.93
1.03
0.87
1.0
1.25
V
IF
= 20mA
IF
= 100mA
IF
= 200mA
Reverse Current (Note 7)
IR
?
30
35
100
100
nA
μA
VR
= 240V
VR
= 240V, T
J
= +150°C
Total Capacitance
CT
?
1.0 5.0 pF VR
= 0V, f = 1.0MHz
Reverse Recovery Time
trr
?
?
50 ns IF
= I
R
= 30mA,
Irr = 3.0mA, RL
= 100
?
Notes: 6. Part mounted on FR-4 substrate with pad dimensions 1 inch X 1 inch, 2oz, copper, single-sided, PC board.
7. Short duration pulse test used to minimize self-heating effect.
400
T , AMBIENT TEMPERATURE, (°C)A
Figure 1 Power Derating Curve, Total Package
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
200
100
300
0
0
500
160
200
120
80
40
Note 6
I , INSTANTANEOUS FORWARD CURRENT (A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (mV)F
Figure 2 Typical Forward Characteristics, Per Element
0.00001
0 300 600 900 1200 1500
0.0001
0.001
0.01
0.1
1
10
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
MMBD301LT3
DIODE SCHOTTKY 200MW 30V SOT-23
MMBD301M3T5G
DIODE SCHOTTKY HOT 30V SOT723
MMBD352WT1G
DIODE SCHOTTKY DUAL 7V SOT-323
MMBD355LT1
DIODE SCHOTTKY DUAL CA 7V SOT-23
MMBD4148PLM-7
DIODE ARRAY CA 75V 6-DFN
MMBD4148TW-7
DIODE SW TRIPLE 75V 200MW SOT363
MMBD4448DW-7
DIODE SWTCH 75V 200MW SOT-363
MMBD4448HSDW-7
DIODE SWITCHING ARRAY 80V SOT363
相关代理商/技术参数
MMBD3004S-7-F
功能描述:二极管 - 通用，功率，开关 300V 350mW RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube
MMBD3004SE
制造商:TSC 制造商全称:Taiwan Semiconductor Company, Ltd 功能描述:350mW SMD Switching Diode
MMBD3004SE RF
功能描述:二极管 - 通用，功率，开关 350mW SMD Switching Diode RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube
MMBD3004SQ-7-F
制造商:Diodes Incorporated 功能描述:MMBD3004SQ-7-F - Tape and Reel
MMBD3005T1
制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:Switching Diode
MMBD301
功能描述:肖特基二极管与整流器
RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MMBD301L
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES
MMBD301LT1
功能描述:肖特基二极管与整流器 30V 200mW Single RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel